Faculty Research Labs & Shared Facilities
We are a multidisciplinary research group working on III-V compound semiconductor technology for materials and devices: molecular beam epitaxial growth and characterization of thin films and nanoscale materials as well as the associated optoelectronic devices. Our research spans the areas of photonic integrated circuits, nanophotonic, semiconductor diode lasers, micro- and nanocavity light sources and quantum photonics. This group is led by Professor Shamsul Arafin.
The Electronic Materials and Devices Laboratory (EMDL) is comprised of students and senior researchers with diverse backgrounds that allows vertical integration of research in electronic materials, nanostructures, optoelectronics, photovoltaics, electronics, device fabrication and integrated systems.The Electronic Materials and Devices Laboratory (EMDL) is directed by Professor Steven A. Ringel
The Center for Emergent Materials is led by Professor Leonard J. Brillson.
The research in our group is interdisciplinary and centers around two areas of micro/nanotechnology and electromagnetics. Our approach is to use novel micro fabrication techniques to develop small scale high-frequency electromagnetic devices and systems. Specifically, we are focused on reconfigurable antennas and circuits, millimeter-wave (30-300 GHz) antennas, phased arrays, innovative beam steering techniques, terahertz (>300 GHz) microsystems, sensors, novel materials, and microfabrication processes. This group is led by Professor Nima Ghalichechian.
Our research focuses on the development, production, and characterization of novel materials and combinations of materials for electronic and photonic applications. Of particular focus is the area of photovoltaics, as well as other clean energy technologies. This group is led by Professor Tyler Grassman.
Our group is paving the way for a fourth generation of infrared imaging systems and applications. These imagers will advance the state-of-the-art in multiple dimensions: high operating temperature (HOT), large format (4K ✕ 4K), distinguishing multiple wavelengths simultaneously (multispectral), and using manufacturing processes that can be scaled to reduce cost and improve quality. The culmination of these improvements is an infrared sensor/imager that behaves more like the human eye: able to capture a wide variety of spatial and color information, adjust on-the-fly based on the environment, and provide actionable information directly. This group is led by Dr. Sanjay Krishna.
We design materials for converting different forms of energy (optical, electronic, thermal) into functions (sensing, energy harvesting, information technology). By using atomic layer-by-layer epitaxial synthesis (plasma-assisted molecular beam epitaxy) we can engineer the compositional profiles within heterostructures of different materials (wide band gap semiconductor alloys, magnetic superlattices) with exquisite crystalline quality. Using spatially-resolved optical spectroscopy, we measure the optical properties (photoluminescence, absorption) as a function of temperature (down to 5 K). Making use of ultrafast (~140 femto-second) laser pulses, we carry out pump-probe measurements with ~1 pico-second resolution to map out the time scale of electronic excitations, as well as magnetic and spin dynamics. This group is led by Professor Roberto Myers.
We are working on making the next generation of III-Nitride electronic devices for applications related to communications, energy-efficient power electronics, and extreme-environment logic. We have a range of projects that focus on realizing high-performance GaN devices by harnessing unique transport, heterostructure, and polarization phenomena in these materials. Ongoing projects include ultra-wide band gap high composition AlGaN-channel devices for high-frequency applications, graded channel devices for microwave linearity, vertical high voltage GaN-based PN diodes, GaN-based logic, and Gallium Nitride HEMTs for power switching applications. This group is led by Professor Siddarth Rajan.
OSU acquired a large signal network analyzer (LSNA) for the vectorial characterization of the non-linear response of RF systems to periodic signals. The LSNA has the unique ability to measure both the phase and amplitude of periodic RF signals of the fundamentals and harmonics up to 50 GHz (our setup is presently being upgraded to work up 40 GHz). The RF signals can be modulated or pulsed. This LSNA equipment offers unique opportunities for the system identification of non-linear RF systems and the experimental verification of non-linear RF models. Current applications being pursued at OSU include (1) the characterization of traps in GaN HEMTs and materials, (2) the development of accurate device and behavioral models of transistors and power-amplifiers, (3) the interactive design of power amplifiers & oscillators using the real-time active loadpul concept and (4) the linearization of broadband RF power amplifiers. The LSNA acquired has also been specially configured to allow for the characterization of pulsed-RF and UWB systems. This laboratory is directored by Professor Patrick Roblin.
Our research focuses on the investigation of the growth and physics of WBG and UWBG semiconductor electronic and optoelectronic materials and devices, metalorganic chemical vapor deposition (MOCVD) of III-nitride and II-IV-nitride semiconductor thin films and devices, low-pressure chemical vapor deposition (LPCVD) of Gallium Oxide thin films, the physics of low-dimensional semiconductor nano-materials/devices, chemical vapor deposition (CVD) of novel nanomaterials, and device design/fabrication of novel devices with new functionality. The OSU MOCVD wide band gap (WBG) and ultra wide band gap (UWBG) Semiconductors, Electronics, Optoelectronics, and Energy Laboratory is led by Prof. Hongping Zhao.
Berger's Nanoelectronics and Optoelectronics Lab (NOEL) pushes the envelope in next-generation novel semiconductor devices by advancing new quantum tunneling bases devices. For instance, continued scaling of CMOS transistors has increased their performance, but not lowered their operational voltage significantly. Indeed, power consumption issues challenge their efficacy in high-traffic mobile platforms, leading to reduced processor speeds to mitigate the constraints of batteries. But, quantum functional circuits employing negative differential resistance (NDR) elements offers a new paradigm of computing that dramatically drops chip voltages to below 0.5 volt. Tunnel diodes are NDR devices that can meet this demand. And thin vertical devices using III-nitrides have been met with a myriad of materials science challenges, but mastering this family opens new vistas of novel vertical nitride devices using thin heterobarriers.
The ambition of this international collaboration, led by Paul Berger, is to deliver the technology to enable a paradigm shift for IoT and medical wearables. Advances in energy harvesting and storage will improve the ability to harvest energy from a variety of sources such as light, radio waves and motion and store it in printed supercapacitors that are non-toxic and unproblematic at end of life. The exploitation of tunneling devices and novel devices combining atomic layer deposition (ALD) and printing will make possible a new generation of low-power and high-speed circuits for power management, data storage, computation and wireless communication. As a result, this team will open the path to a true Internet of Things that will cost very little, be placeable anywhere, and deserve the description "environmentally friendly". These objects will be energy autonomous, battery free, be able to sense, process and analyze environmental, body and other information and transfer it by acceptable wireless protocols to networks of the user’s choice. Because they will be manufactured by low temperature, low cost mass manufacturing processes, they will be ultra-low cost and able to be put on thin, flexible carriers that make them able to be truly put anywhere.