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Paul R. Berger

  • Professor, Electrical & Computer Engr.
  • Room #201
    2024 Neil Ave
    Columbus, OH 43210
  • 614-247-6235

About

Education

Ph.D. 1990, University of Michigan

Areas of interest

Nanoelectronics, Si-based tunneling junctions, optoelectronic devices and integrated circuits, polymer-based photonics and electronics and semiconductor materials.

Advising student groups

  • The Ohio State University, Recruitment and Retention Initiative for Successful Engineers (RISE^OSU) (Service) Advisor
  • The Ohio State University, Solar Education and Outreach (Service) Advisor
  • The Ohio State University, IEEE Graduate Student Body (Academic Interest) Advisor
  • The Ohio State University, IEEE Undergraduate Student Chapter (Academic Interest) Advisor

Office

201 Caldwell

Honors

  • January, 2011-
    December, 2014

    Distinguished Lecturer.

  • May, 2014

    Outstanding Engineering Educator, Ohio Society of Professional Engineers.

  • February, 2014

    Outstanding Engineering Educator, Franklin County Chapter of Ohio Society of Professional Engineers.

  • April, 2013

    Winner at Denman Undergraduate Research Forum.

  • April, 2012

    Winner at Denman Undergraduate Research Forum.

  • January, 2012

    Finalist, Inventor of the Year.

  • May, 2011

    Presidential Fellowship (Ms. Anisha Ramesh).

  • April, 2011

    Lumley Research Award.

  • January, 2011

    Fellow, Institute of Electrical and Electronics Engineers.

  • January, 2010

    Senior Member.

  • June, 2009

    Runner-Up in the Best Poster Award. Northwest Shoals Community College.

  • April, 2009

    Presidential Fellowship (Mr. Woo-Jun Yoon).

  • April, 2009

    Faculty Diversity Excellence Award.

  • January, 2009

    Recognized.

  • May, 2008

    Honorable Mention. John M Patterson State Technical College.

  • January, 2008

    Finalist, Inventor of the Year.

  • January, 2007

    Recognized.

  • April, 2006

    Lumley Research Award.

  • December, 2005

    Best Student Poster Award.

  • December, 2003

    Finalist for Best Student Paper Award.

  • January, 1999-
    January, 2000

    Nominated, Excellence in Teaching Award.

  • January, 2000

    Allan P. Colburn Prize for Best Dissertation in Engineering and Mathematical Sciences.

  • January, 1998

    Recognized.

  • January, 1998

    DARPA Ultra Electronics Program Award of Excellence.

  • January, 1998

    Fellow.

  • January, 1996-
    January, 1997

    Nominated, Excellence in Teaching Award.

  • January, 1997

    Elected, Senior Member.

  • January, 1996

    Faculty Early Career Development Award (CAREER).

  • January, 1992

    Recognized.

Chapters

2020

  • 2020. "Fabrication and Characterization of GaN/AlN Resonant Tunneling Diodes." In High-Frequency GaN Electronic Devices, edited by Fay P; Jena D; Maki P,

2011

  • 2011. "Negative Differential Resistance Devices and Circuits." In Comprehensive Semiconductor Science and Technology, edited by Pallab, B.; Roberto, F.; Hiroshi, K.,

2002

  • 2002. "Electrodes." In Survey of semiconductor physics,
  • 2002. "Doping and Junction Formation." In Survey of semiconductor physics,

1995

  • 1995. "Photoluminescence." In Handbook of Thin Solid Film Process Technology, edited by edited by D. Glocker, Eastman Kodak Research Laboratories, and S. I. Shah, I. I. du Pont de Nemours & Company,

1994

  • 1994. In Optoelectronic Materials Growth and Processing,

Journal Articles

2020

  • Li, M.; Honkanen, M.; Liu, X.; Rokaya, C. et al., 2020, "0.7-GHz Solution-Processed Indium Oxide Rectifying Diodes." IEEE TRANSACTIONS ON ELECTRON DEVICES 67, no. 1, 360-364 - 360-364.
  • Zhang, W-D.; Growden, T.A.; Storm, D.F.; Meyer, D.J. et al., 2020, "Investigation of Switching Time in GaN/AlN Resonant Tunneling Diodes by Experiments and P-SPICE Models." IEEE TRANSACTIONS ON ELECTRON DEVICES 67, no. 1, 75-79 - 75-79.

2019

  • Growden, T.A.; Cornuelle, E.M.; Storm, D.F.; Zhang, W. et al., 2019, "930 kA/cm(2) peak tunneling current density in GaN/AlN resonant tunneling diodes grown on MOCVD GaN-on-sapphire template." APPLIED PHYSICS LETTERS 114, no. 20,
  • Bhalerao, S.R.; Lupo, D.; Zangiabadi, A.; Kymissis, I. et al., 2019, "0.6V Threshold Voltage Thin Film Transistors With Solution Processable Indium Oxide (In2O3) Channel and Anodized High-kappa Al2O3 Dielectric." IEEE ELECTRON DEVICE LETTERS 40, no. 7, 1112-1115 - 1112-1115.

2018

  • Rinne, J.; Keskinen, J.; Berger, P.R.; Lupo, D. et al., 2018, "M2M Communication Assessment in Energy-Harvesting andWake-Up Radio Assisted Scenarios Using Practical Components." SENSORS 18, no. 11,
  • Growden, T.A.; Zhang, W.; Brown, E.R.; Storm, D.F. et al., 2018, "Near-UV electroluminescence in unipolar-doped, bipolar-tunneling GaN/AlN heterostructures." LIGHT-SCIENCE & APPLICATIONS 7,
  • Ishimaru, K.; Horiguchi, N.; Nojiri, K.; Zhang, P.L. et al., 2018, "Guest Editorial Special Section on the Second Electron Devices Technology and Manufacturing (EDTM) Conference 2018." IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY 6, no. 1, 1197-1199 - 1197-1199.
  • Growden, T.A.; Zhang, W.; Brown, E.R.; Storm, D.F. et al., 2018, "431 kA/cm(2) peak tunneling current density in GaN/AlN resonant tunneling diodes." APPLIED PHYSICS LETTERS 112, no. 3,
  • Сулейманов, С.Х.; Berger, P.; Дыскин, В.Г.; Джанклич, М.У. et al., 2018, "Увеличение эффективности органических солнечных элементов с помощью просветляющих покрытий на основе фторидных композиций." Журнал технической физики 44, no. 7, 47-47 - 47-47.
  • Berger, P.R.; Kim, M., 2018, "Polymer solar cells: P3HT: PCBM and beyond." JOURNAL OF RENEWABLE AND SUSTAINABLE ENERGY 10, no. 1,

2017

  • Rinne, J.; Keskinen, J.; Berger, P.R.; Lupo, D. et al., 2017, "Viability Bounds of M2M Communication Using Energy-Harvesting and Passive Wake-Up Radio." IEEE ACCESS 5, 27868-27878 - 27868-27878.
  • Rinne, J.; Keskinen, J.; Berger, P.R.; Lupo, D. et al., 2017, "Feasibility and Fundamental Limits of Energy-Harvesting Based M2M Communications." International Journal of Wireless Information Networks 1-9 - 1-9.
  • Storm, D.F.; Growden, T.A.; Zhang, W.; Brown, E.R. et al., 2017, "AlN/GaN/AlN resonant tunneling diodes grown by rf-plasma assisted molecular beam epitaxy on freestanding GaN." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 35, no. 2,
  • Shahpari, M., 2017, "interview." ELECTRONICS LETTERS 53, no. 20, 1338-1338 - 1338-1338.
  • Guttman, J.J.; Chambers, C.B.; Villagracia, A.R.; Santos, G.N.C. et al., 2017, "Negative differential resistance in polymer tunnel diodes using atomic layer deposited, TiO2 tunneling barriers at various deposition temperatures." ORGANIC ELECTRONICS 47, 228-234 - 228-234.

2016

  • Growden, T.A.; Storm, D.F.; Zhang, W.; Brown, E.R. et al., 2016, "Highly repeatable room temperature negative differential resistance in AlN/GaN resonant tunneling diodes grown by molecular beam epitaxy." APPLIED PHYSICS LETTERS 109, no. 8,
  • Berger, P.R.; Chin, A.; Nishiyama, A.; Ieong, M., 2016, "Foreword Special Issue on Advanced Technology for Ultra-Low Power Electronic Devices." IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY 4, no. 5, 203-204 - 203-204.
  • Jindal, R.P., 2016, "Untitled." IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY 4, no. 5, 202-202 - 202-202.
  • Suleimanov, S.K.; Berger, P.; Dyskin, V.G.; Dzhanklych, M.U. et al., 2016, "Antireflection coatings based on fluoride formulations for organic solar cells." TECHNICAL PHYSICS LETTERS 42, no. 4, 359-361 - 359-361.
  • Zhang, W-D.; Brown, E.R.; Growden, T.A.; Berger, P.R. et al., 2016, "A Nonlinear Circuit Simulation of Switching Process in Resonant-Tunneling Diodes." IEEE TRANSACTIONS ON ELECTRON DEVICES 63, no. 12, 4993-4997 - 4993-4997.
  • Suleimanov, S.K.; Berger, P.; Dyskin, V.G.; Dzhanklich, M.U. et al., 2016, "Antireflection composite coatings for organic solar cells." Applied Solar Energy (English translation of Geliotekhnika) 52, no. 2, 157-158 - 157-158.

2015

  • Ravi, A.; Luthra, A.; Teixeira, F.L.; Berger, P.R. et al., 2015, "Tuning the Plasmonic Extinction Resonances of Hexagonal Arrays of Ag Nanoparticles." PLASMONICS 10, no. 6, 1505-1512 - 1505-1512.
  • Growden, T.A.; Brown, E.R.; Zhang, W.; Droopad, R. et al., 2015, "Experimental determination of quantum-well lifetime effect on large-signal resonant tunneling diode switching time." APPLIED PHYSICS LETTERS 107, no. 15,

2014

  • Jung, K-Y.; Yoon, W-J.; Park, Y.B.; Berger, P.R. et al., 2014, "Broadband Finite-Difference Time-Domain Modeling of Plasmonic Organic Photovoltaics." ETRI JOURNAL 36, no. 4, 653-660 - 653-660.
  • Heljo, P.S.; Wolff, K.; Lahtonen, K.; Valden, M. et al., 2014, "Anodic Oxidation of Ultra-Thin Ti Layers on ITO Substrates and their Application in Organic Electronic Memory Elements." ELECTROCHIMICA ACTA 137, 91-98 - 91-98.

2013

  • Berger, P., 2013, "Towards in vivo biosensors for low-cost protein sensing." ELECTRONICS LETTERS 49, no. 7, 450-451 - 450-451.
  • Ramesh, A.; Ren, F.; Berger, P.R.; Casal, P. et al., 2013, "Towards in vivo biosensors for low-cost protein sensing." ELECTRONICS LETTERS 49, no. 7, 450-451 - 450-451.
  • Berger, P.R.; Ramesh, A.; Loo, R., 2013, "Si/SiGe Resonant Interband Tunnel Diodes Grown by Large-Area Chemical Vapor Deposition." ULSI PROCESS INTEGRATION 8 58, no. 9, 81-88 - 81-88.
  • Berger, P., 2013, "interview." ELECTRONICS LETTERS 49, no. 7, 436-436 - 436-436.

2012

  • Morrison, J.T.; Storm, M.; Chowdhury, E.; Akli, K.U. et al., 2012, "Selective deuteron production using target normal sheath acceleration." PHYSICS OF PLASMAS 19, no. 3,
  • Ramesh, A.; Growden, T.A.; Berger, P.R.; Loo, R. et al., 2012, "Boron Delta-Doping Dependence on Si/SiGe Resonant Interband Tunneling Diodes Grown by Chemical Vapor Deposition." IEEE TRANSACTIONS ON ELECTRON DEVICES 59, no. 3, 602-609 - 602-609.
  • Ramesh, A.; Berger, P.R.; Loo, R., 2012, "High 5.2 peak-to-valley current ratio in Si/SiGe resonant interband tunnel diodes grown by chemical vapor deposition." APPLIED PHYSICS LETTERS 100, no. 9,

2011

  • Gupta, S.K.; Wu, H-H.; Kwak, K.J.; Casal, P. et al., 2011, "Interfacial design and structure of protein/polymer films on oxidized AlGaN surfaces." JOURNAL OF PHYSICS D-APPLIED PHYSICS 44, no. 3,
  • Ramesh, A.; Park, S-Y.; Berger, P.R., 2011, "90 nm x 32 32 bit Tunneling SRAM Memory Array With 0.5 ns Write Access Time, 1 ns Read Access Time and 0.5 V Operation." IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS 58, no. 10, 2432-2445 - 2432-2445.
  • Gupta,Samit,K; Wu,Hao-Hsuan; Kwak,Kwang,J; Casal,Patricia; Nicholson,Theodore,R; Wen,Xuejin; Anisha,R; Bhushan,Bharat; Berger,Paul,R; Lu,Wu; Brillson,Leonard,J; Lee,Stephen,Craig, 2011, "Interfacial design and structure of protein/polymer films on oxidized AlGaN surfaces." JOURNAL OF PHYSICS D-APPLIED PHYSICS 44, no. 3, 034010 - 034010.

2010

  • Yoon, W-J.; Bhattacharyya, D.; Timmons, R.B.; Berger, P.R., 2010, "Plasma-polymerized multistacked bipolar gate dielectric for organic thin-film transistors." ORGANIC ELECTRONICS 11, no. 11, 1767-1771 - 1767-1771.
  • Nicholson, T.R.; Gupta, S.; Wen, X.; Wu, H.H. et al., 2010, "Rational enhancement of nanobiotechnological device functions illustrated by partial optimization of a protein-sensing field effect transistor." Proceedings of the Institution of Mechanical Engineers, Part N: Journal of Nanoengineering and Nanosystems 223, no. 3, 149-161 - 149-161.
  • Yoon,Woo-Jun; Jung,Kyung-Young; Liu,Jiwen; Duraisamy,Thirumalai; Revur,Rao; Teixeira,Fernando,L; Sengupta,Suvankar; Berger,Paul,R, 2010, "Plasmon-enhanced optical absorption and photocurrent in organic bulk heterojunction photovoltaic devices using self-assembled layer of silver nanoparticles." SOLAR ENERGY MATERIALS AND SOLAR CELLS 94, no. 2, 128-132 - 128-132.
  • Yoon,Woo-Jun; Jung,Kyung-Young; Liu,Jiwen; Duraisamy,Thirumalai; Revur,Rao; Teixeira,Fernando,L; Sengupta,Suvankar; Berger,Paul,R, 2010, "Plasmon-enhanced optical absorption and photocurrent in organic bulk heterojunction photovoltaic devices using self-assembled layer of silver nanoparticles." SOLAR ENERGY MATERIALS AND SOLAR CELLS 94, no. 2, 128-132 - 128-132.
  • Park, S-Y.; Di Giacomo, S.J.; Anisha, R.; Berger, P.R. et al., 2010, "Fabrication of nanowires with high aspect ratios utilized by dry etching with SF6:C4F8 and self-limiting thermal oxidation on Si substrate." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 28, no. 4, 763-768 - 763-768.
  • Yoon, W-J.; Berger, P.R., 2010, "Atomic layer deposited HfO2 gate dielectrics for low-voltage operating, high-performance poly-(3-hexythiophene) organic thin-film transistors." ORGANIC ELECTRONICS 11, no. 11, 1719-1722 - 1719-1722.
  • Yoon, W-J.; Jung, K-Y.; Liu, J.; Duraisamy, T. et al., 2010, "Plasmon-enhanced optical absorption and photocurrent in organic bulk heterojunction photovoltaic devices using self-assembled layer of silver nanoparticles." SOLAR ENERGY MATERIALS AND SOLAR CELLS 94, no. 2, 128-132 - 128-132.

2009

  • Thompson, P.E.; Jernigan, G.G.; Park, S-Y.; Yu, R. et al., 2009, "P and B doped Si resonant interband tunnel diodes with as-grown negative differential resistance." ELECTRONICS LETTERS 45, no. 14, 759-760 - 759-760.
  • Yu, R.; Anisha, R.; Jin, N.; Chung, S-Y. et al., 2009, "Observation of strain in pseudomorphic Si1-xGex by tracking phonon participation in Si/SiGe resonant interband tunnel diodes via electron tunneling spectroscopy." JOURNAL OF APPLIED PHYSICS 106, no. 3,
  • Park, S-Y.; Anisha, R.; Berger, P.R.; Loo, R. et al., 2009, "Si/SiGe Resonant Interband Tunneling Diodes Incorporating delta-Doping Layers Grown by Chemical Vapor Deposition." IEEE ELECTRON DEVICE LETTERS 30, no. 11, 1173-1175 - 1173-1175.

2008

  • Yoon, W-J.; Orlove, S.B.; Olmon, R.L.; Berger, P.R., 2008, "Enhanced emission using thin Li-halide cathodic interlayers for improved injection into poly(p-phenylene vinylene) derivative PLEDs." ELECTROCHEMICAL AND SOLID STATE LETTERS 11, no. 10, J76-J78 - J76-J78.
  • Jin, N.; Yu, R.; Chung, S-Y.; Berger, P.R. et al., 2008, "Strain-engineered Si/SiGe resonant interband tunneling diodes grown on Si0.8Ge0.2 virtual substrates with strained Si cladding layers." IEEE ELECTRON DEVICE LETTERS 29, no. 6, 599-602 - 599-602.
  • Anisha, R.; Jin, N.; Chung, S-Y.; Yu, R. et al., 2008, "Strain engineered Si/SiGe resonant interband tunneling diodes with outside barriers grown on Si0.8Ge0.2 virtual substrates." APPLIED PHYSICS LETTERS 93, no. 10,
  • Bhattacharyya, D.; Yoon, W-J.; Berger, P.R.; Timmons, R.B., 2008, "Plasma-polymerized multistacked organic bipolar films: A new approach to flexible high-k dielectrics." ADVANCED MATERIALS 20, no. 12, 2383-+ - 2383-+.
  • Yoon, W-J.; Berger, P.R., 2008, "4.8% efficient poly(3-hexylthiophene)-fullerene derivative (1 : 0.8) bulk heterojunction photovoltaic devices with plasma treated AgOx/indium tin oxide anode modification." APPLIED PHYSICS LETTERS 92, no. 1,

2007

  • Park, S-Y.; Yu, R.; Chung, S-Y.; Berger, P.R. et al., 2007, "Sensitivity of Si-based zero-bias backward diodes for microwave detection." ELECTRONICS LETTERS 43, no. 5, 295-296 - 295-296.
  • Tresback, J.S.; Vasiliev, A.L.; Padture, N.P.; Park, S-Y. et al., 2007, "Characterization and electrical properties of individual Au-NiO-Au heterojunction nanowires." IEEE TRANSACTIONS ON NANOTECHNOLOGY 6, no. 6, 676-681 - 676-681.
  • Chung, S-Y.; Jin, N.; Pavlovicz, R.E.; Berger, P.R. et al., 2007, "Analysis of the voltage swing for logic and memory applications in Si/SiGe resonant interband tunnel diodes grown by molecular beam epitaxy." IEEE TRANSACTIONS ON NANOTECHNOLOGY 6, no. 2, 158-163 - 158-163.

2006

  • Xu, Y.; Berger, P.R.; Cho, J.; Timmons, R.B., 2006, "Pulsed plasma polymerized dichlorotetramethyldisiloxane high-k gate dielectrics for polymer field-effect transistors." JOURNAL OF APPLIED PHYSICS 99, no. 1,
  • Park, S-Y.; Chung, S-Y.; Yu, R.; Berger, P.R. et al., 2006, "Low sidewall damage plasma etching using ICP-RIE with HBr chemistry of Si/SiGe resonant interband tunnel diodes." ELECTRONICS LETTERS 42, no. 12, 719-721 - 719-721.
  • Chung, S-Y.; Park, S-Y.; Daulton, J.W.; Yu, R. et al., 2006, "Integration of Si/SiGe HBT and Si-based RITD demonstrating controllable negative differential resistance for wireless applications." SOLID-STATE ELECTRONICS 50, no. 6, 973-978 - 973-978.
  • Jin, N.; Chung, S-Y.; Yu, R.; Heyns, R.M. et al., 2006, "The effect of spacer thicknesses on Si-based resonant interband tunneling diode performance and their application to low-power tunneling diode SRAM circuits." IEEE TRANSACTIONS ON ELECTRON DEVICES 53, no. 9, 2243-2249 - 2243-2249.
  • Chung, S-Y.; Yu, R.; Jin, N.; Park, S-Y. et al., 2006, "Si/SiGe resonant interband tunnel diode with f(r0) 20.2 GHz and peak current density 218 kA/cm(2) for K-band mixed-signal applications." IEEE ELECTRON DEVICE LETTERS 27, no. 5, 364-367 - 364-367.

2005

  • Yoon, W.J.; Chung, S.Y.; Berger, P.R.; Asar, S.M., 2005, "Room-temperature negative differential resistance in polymer tunnel diodes using a thin oxide layer and demonstration of threshold logic." APPLIED PHYSICS LETTERS 87, no. 20,
  • Jin, N.; Chung, S.Y.; Yu, R.; Berger, P.R. et al., 2005, "Temperature dependent DC/RF performance of Si/SiGe resonant interband tunnelling diodes." ELECTRONICS LETTERS 41, no. 9, 559-560 - 559-560.
  • Jin, N.; Yu, R.H.; Chung, S.Y.; Berger, P.R. et al., 2005, "High sensitivity Si-based backward diodes for zero-biased square-law detection and the effect of post-growth annealing on performance." IEEE ELECTRON DEVICE LETTERS 26, no. 8, 575-578 - 575-578.
  • Jin, N.; Chung, S.Y.; Yu, R.H.; Di Giacomo, S.J. et al., 2005, "RF performance and modeling of Si/SiGe resonant interband tunneling diodes." IEEE TRANSACTIONS ON ELECTRON DEVICES 52, no. 10, 2129-2135 - 2129-2135.

2004

  • Xu, Y.; Berger, P.R., 2004, "High electric-field effects on short-channel polythiophene polymer field-effect transistors." JOURNAL OF APPLIED PHYSICS 95, no. 3, 1497-1501 - 1497-1501.
  • Chung, S.Y.; Jin, N.; Pavlovicz, R.E.; Berger, P.R. et al., 2004, "Annealing of defect density and excess currents in Si-based tunnel diodes grown by low-temperature molecular-beam epitaxy." JOURNAL OF APPLIED PHYSICS 96, no. 1, 747-753 - 747-753.
  • Xu, Y.F.; Berger, P.R.; Cho, J.; Timmons, R.B., 2004, "Capacitance-voltage characterization of pulsed plasma polymerized allylamine dielectrics for flexible polymeric field effect transistors." JOURNAL OF ELECTRONIC MATERIALS 33, no. 10, 1240-1247 - 1240-1247.
  • Jin, N.; Chung, S.Y.; Heyns, R.M.; Berger, P.R. et al., 2004, "Tri-state logic using vertically integrated Si-SiGe resonant interband tunneling diodes with double NDR." IEEE ELECTRON DEVICE LETTERS 25, no. 9, 646-648 - 646-648.
  • Jin, N.; Chling, S.Y.; Yu, R.; Berger, P.R. et al., 2004, "Improved vertically stacked Si/SiGe resonant interband tunnel diode pair with small peak voltage shift and unequal peak currents." ELECTRONICS LETTERS 40, no. 24, 1548-1550 - 1548-1550.
  • Xu, Y.F.; Berger, P.R.; Wilson, J.N.; Bunz, U.H.F., 2004, "Photoresponsivity of polymer thin-film transistors based on polyphenyleneethynylene derivative with improved hole injection." APPLIED PHYSICS LETTERS 85, no. 18, 4219-4221 - 4219-4221.
  • Weaver, B.D.; Thompson, P.E.; Jin, N.; Chung, S.Y. et al., 2004, "Radiation tolerance of Si/Si0.6Ge0.4 resonant interband tunneling diodes." JOURNAL OF APPLIED PHYSICS 95, no. 11, 6406-6408 - 6406-6408.
  • Chung, S.Y.; Jin, N.; Berger, P.R.; Yu, R.H. et al., 2004, "Three-terminal Si-based negative differential resistance circuit element with adjustable peak-to-valley current ratios using a monolithic vertical integration." APPLIED PHYSICS LETTERS 84, no. 14, 2688-2690 - 2688-2690.

2003

  • Chung, S.Y.; Berger, P.R.; Fang, Z.Q.; Thompson, P.E., 2003, "Growth temperature effects on deep-levels in si grown by low temperature molecular beam epitaxy." NOVEL MATERIALS AND PROCESSES FOR ADVANCED CMOS 745, 257-263 - 257-263.
  • Rivas, C.; Lake, R.; Frensley, W.R.; Klimeck, G. et al., 2003, "Full band modeling of the excess current in a delta-doped silicon tunnel diode." JOURNAL OF APPLIED PHYSICS 94, no. 8, 5005-5013 - 5005-5013.
  • Chung, S.Y.; Jin, N.; Rice, A.T.; Berger, P.R. et al., 2003, "Growth temperature and dopant species effects on deep levels in Si grown by low temperature molecular beam epitaxy." JOURNAL OF APPLIED PHYSICS 93, no. 11, 9104-9110 - 9104-9110.
  • Word, M.J.; Adesida, I.; Berger, P.R., 2003, "Nanometer-period gratings in hydrogen silsesquioxane fabricated by electron beam lithography." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 21, no. 6, L12-L15 - L12-L15.
  • Jin, N.; Chung, S.Y.; Rice, A.T.; Berger, P.R. et al., 2003, "151 kA/cm(2) peak current densities in Si/SiGe resonant interband tunneling diodes for high-power mixed-signal applications." APPLIED PHYSICS LETTERS 83, no. 16, 3308-3310 - 3308-3310.
  • Jin, N.; Chung, S.Y.; Rice, A.T.; Berger, P.R. et al., 2003, "Diffusion barrier cladding in Si/SiGe resonant interband tunneling diodes and their patterned growth on PMOS source/drain regions." IEEE TRANSACTIONS ON ELECTRON DEVICES 50, no. 9, 1876-1884 - 1876-1884.

2001

  • Jin, N.; Berger, P.R.; Rommel, S.L.; Thompson, P.E. et al., 2001, "pnp Si resonant interband tunnel diode with symmetrical NDR." ELECTRONICS LETTERS 37, no. 23, 1412-1414 - 1412-1414.
  • Rivas, C.; Lake, R.; Klimeck, G.; Frensley, W.R. et al., 2001, "Full-band simulation of indirect phonon assisted tunneling in a silicon tunnel diode with delta-doped contacts." APPLIED PHYSICS LETTERS 78, no. 6, 814-816 - 814-816.
  • Hobart, K.D.; Thompson, P.E.; Rommel, S.L.; Dillon, T.E. et al., 2001, ""p-on-n" Si interband tunnel diode grown by molecular beam epitaxy." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 19, no. 1, 290-293 - 290-293.

2000

  • Thompson, P.E.; Hobart, K.D.; Twigg, M.E.; Rommel, S.L. et al., 2000, "Epitaxial Si-based tunnel diodes." THIN SOLID FILMS 380, no. 1-2, 145-150 - 145-150.
  • Dashiell, M.W.; Troeger, R.T.; Rommel, S.L.; Adam, T.N. et al., 2000, "Current-voltage characteristics of high current density silicon Esaki diodes grown by molecular beam epitaxy and the influence of thermal annealing." IEEE TRANSACTIONS ON ELECTRON DEVICES 47, no. 9, 1707-1714 - 1707-1714.
  • Rommel, S.L.; Jin, N.; Dillon, T.E.; Di Giacomo, S.J. et al., 2000, "Development of δB/i-Si/δSb and δB/i-Si/δSb/i-Si/δB resonant interband tunnel diodes for integrated circuit applications." Annual Device Research Conference Digest 159-160 - 159-160.

1999

  • Thompson, P.E.; Hobart, K.D.; Twigg, M.E.; Jernigan, G.G. et al., 1999, "Si resonant interband tunnel diodes grown by low-temperature molecular-beam epitaxy." APPLIED PHYSICS LETTERS 75, no. 9, 1308-1310 - 1308-1310.
  • Shao, X.P.; Jonczyk, R.; Dashiell, M.; Hits, D. et al., 1999, "Strain modification in thin Si1-x-yGexCy alloys on (100) Si for formation of high density and uniformly sized quantum dots." JOURNAL OF APPLIED PHYSICS 85, no. 1, 578-582 - 578-582.
  • Rommel, S.L.; Dillon, T.E.; Berger, P.R.; Thompson, P.E. et al., 1999, "Epitaxially grown Si resonant interband tunnel diodes exhibiting high current densities." IEEE ELECTRON DEVICE LETTERS 20, no. 7, 329-331 - 329-331.

1998

  • Rommel, S.L.; Dillon, T.E.; Dashiell, M.W.; Feng, H. et al., 1998, "Room temperature operation of epitaxially grown Si/Si0.5Ge0.5/Si resonant interband tunneling diodes." APPLIED PHYSICS LETTERS 73, no. 15, 2191-2193 - 2191-2193.
  • Dashiell, M.W.; Troeger, R.T.; Roe, K.J.; Khan, A.S. et al., 1998, "Electrical and optical properties of phosphorus doped Ge1-yCy." Thin Solid Films 321, no. 1-2, 47-50 - 47-50.
  • Shao, X.P.; Rommel, S.L.; Orner, B.A.; Feng, H. et al., 1998, "1.3 mu m photoresponsivity in Si-based Ge1-xCx photodiodes." APPLIED PHYSICS LETTERS 72, no. 15, 1860-1862 - 1860-1862.

1997

  • Gao, W.; Berger, P.R.; Zydzik, G.J.; OBryan, H.M. et al., 1997, "In0.53Ca0.47As MSM photodiodes with transparent CTO Schottky contacts and digital superlattice grading." IEEE TRANSACTIONS ON ELECTRON DEVICES 44, no. 12, 2174-2179 - 2174-2179.
  • Shao, X.; Rommel, S.L.; Orner, B.A.; Kolodzey, J. et al., 1997, "A p-Ge1-xCx/n-Si heterojunction diode grown by molecular beam epitaxy." IEEE Electron Device Letters 18, no. 9, 411-413 - 411-413.
  • Khan, A.S.T.; Berger, P.R.; Guarin, F.J.; Iyer, S.S., 1997, "Near band edge photoluminescence from pseudomorphic tensially strained Si0.985C0.015 alloy." THIN SOLID FILMS 294, no. 1-2, 122-124 - 122-124.
  • Shao, X.P.; Rommel, S.L.; Omer, B.A.; Berger, P.R. et al., 1997, "Low resistance ohmic contacts to p-Ge1-xCx on Si." IEEE ELECTRON DEVICE LETTERS 18, no. 1, 7-9 - 7-9.
  • Shao, X.P.; Rommel, S.L.; Orner, B.A.; Kolodzey, J. et al., 1997, "A p-Ge1-xCx/n-Si heterojunction diode crown by molecular beam epitaxy." IEEE ELECTRON DEVICE LETTERS 18, no. 9, 411-413 - 411-413.

1996

  • Khan, A.S.T.; Berger, P.R.; Guarin, F.J.; Iyer, S.S., 1996, "Band-edge photoluminescence from pseudomorphic Si0.96Sn0.04 alloy." APPLIED PHYSICS LETTERS 68, no. 22, 3105-3107 - 3105-3107.
  • Gao, W.; Berger, P.R., 1996, "Liquid phase epitaxial growth of InGaAs on InP using rare-earth-treated melts." JOURNAL OF APPLIED PHYSICS 80, no. 12, 7094-7103 - 7094-7103.
  • Gao, W.; Berger, P.R.; Hunsperger, R.G.; Pamulapati, J. et al., 1996, "Liquid phase epitaxial growth process of InGaAs on InP with rare earth treatment." PHOTODETECTORS: MATERIALS AND DEVICES 2685, 171-177 - 171-177.
  • Orner, B.A.; Khan, A.; Hits, D.; Chen, F. et al., 1996, "Optical properties of Ge1-yCy alloys." JOURNAL OF ELECTRONIC MATERIALS 25, no. 2, 297-300 - 297-300.
  • Chen, F.; Orner, B.A.; Guerin, D.; Khan, A. et al., 1996, "Current transport characteristics of SiGeC/Si heterojunction diode." IEEE ELECTRON DEVICE LETTERS 17, no. 12, 589-591 - 589-591.
  • Orner, B.A.; Khan, A.; Hits, D.; Chen, F. et al., 1996, "Optical properties of Ge1-yCy alloys." Journal of Electronic Materials 25, no. 2, 297-300 - 297-300.
  • Berger, Paul R., 1996, "MSM photodiodes." IEEE Potentials 15, no. 2,
  • Pamulapati, J.; Bhattacharya, P.K.; Singh, J.; Berger, P.R. et al., 1996, "Realization of in-situ sub two-dimensional quantum structures by strained layer growth phenomena in the InxGa1-xAs/GaAs system." JOURNAL OF ELECTRONIC MATERIALS 25, no. 3, 479-483 - 479-483.

1995

  • Gao,W; Berger,P,R; Hunsperger,R,G; Zydzik,G; RHODES,W,W; OBRYAN,H,M; Sivco,D; Cho,A,Y, 1995, "TRANSPARENT AND OPAQUE SCHOTTKY CONTACTS ON UNDOPED IN0.52AL0.48AS GROWN BY MOLECULAR-BEAM EPITAXY." APPLIED PHYSICS LETTERS 66, no. 25, 3471-3473 - 3471-3473.
  • Kolodzey, J.; Berger, P.R.; Orner, B.A.; Hits, D. et al., 1995, "Optical and electronic properties of SiGeC alloys grown on Si substrate." JOURNAL OF CRYSTAL GROWTH 157, no. 1-4, 386-391 - 386-391.
  • GAO, W.; BERGER, P.R.; HUNSPERGER, R.G.; ZYDZIK, G. et al., 1995, "TRANSPARENT AND OPAQUE SCHOTTKY CONTACTS ON UNDOPED IN0.52AL0.48AS GROWN BY MOLECULAR-BEAM EPITAXY." APPLIED PHYSICS LETTERS 66, no. 25, 3471-3473 - 3471-3473.

1994

  • NICHOLS, D.T.; LOPATA, J.; HOBSON, W.S.; DUTTA, N.K. et al., 1994, "MONOLITHIC GAAS/ALGAAS OPTICAL TRANSMITTER CIRCUIT USING A SINGLE GROWTH STEP." ELECTRONICS LETTERS 30, no. 6, 490-491 - 490-491.
  • BERGER, P.R.; CHU, S.N.G.; LOGAN, R.A.; BYRNE, E. et al., 1994, "SUBSTRATE ORIENTATION EFFECTS ON DOPANT INCORPORATION IN INP GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION (VOL 73, PG 4095, 1993)." JOURNAL OF APPLIED PHYSICS 76, no. 4, 2562-2562 - 2562-2562.
  • GAO, W.; KHAN, A.S.; BERGER, P.R.; HUNSPERGER, R.G. et al., 1994, "IN0.53GA0.47AS METAL-SEMICONDUCTOR-METAL PHOTODIODES WITH TRANSPARENT CADMIUM TIN OXIDE SCHOTTKY CONTACTS." APPLIED PHYSICS LETTERS 65, no. 15, 1930-1932 - 1930-1932.

1993

  • BERGER, P.R.; CHU, S.N.G.; LOGAN, R.A.; BYRNE, E. et al., 1993, "SUBSTRATE ORIENTATION EFFECTS ON DOPANT INCORPORATION IN INP GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION." JOURNAL OF APPLIED PHYSICS 73, no. 8, 4095-4097 - 4095-4097.
  • NICHOLS, D.; DUTTA, N.K.; BERGER, P.R.; SMITH, P.R. et al., 1993, "MONOLITHIC GAAS/ALGAAS PIN MESFET PHOTORECEIVER USING A SINGLE MOLECULAR-BEAM EPITAXY GROWTH STEP." ELECTRONICS LETTERS 29, no. 12, 1133-1134 - 1133-1134.
  • DUTTA, N.K.; LOPATA, J.; BERGER, P.R.; WANG, S.J. et al., 1993, "10 GHZ BANDWIDTH MONOLITHIC P-I-N MODULATION-DOPED FIELD-EFFECT TRANSISTOR PHOTORECEIVER." APPLIED PHYSICS LETTERS 63, no. 15, 2115-2116 - 2115-2116.
  • BERGER, P.R.; DUTTA, N.K.; HUMPHREY, D.A.; SMITH, P.R. et al., 1993, "8-ELEMENT LINEAR-ARRAY MONOLITHIC P-I-N MODFET PHOTORECEIVERS USING MOLECULAR-BEAM EPITAXIAL REGROWTH." IEEE PHOTONICS TECHNOLOGY LETTERS 5, no. 1, 63-66 - 63-66.

1992

  • BERGER, P.R.; DUTTA, N.K.; HUMPHREY, D.A.; SMITH, P.R. et al., 1992, "1.0 GHZ MONOLITHIC P-I-N MODFET PHOTORECEIVER USING MOLECULAR-BEAM EPITAXIAL REGROWTH." IEEE PHOTONICS TECHNOLOGY LETTERS 4, no. 8, 891-894 - 891-894.
  • BERGER, P.R.; DUTTA, N.K.; ZYDZIK, G.; OBRYAN, H.M. et al., 1992, "IN0.53GA0.47AS P-I-N PHOTODIODES WITH TRANSPARENT CADMIUM TIN OXIDE CONTACTS." APPLIED PHYSICS LETTERS 61, no. 14, 1673-1675 - 1673-1675.

1991

  • BERGER, P.R.; DUTTA, N.K.; SIVCO, D.L.; CHO, A.Y., 1991, "GAAS QUANTUM-WELL LASER AND HETEROJUNCTION BIPOLAR-TRANSISTOR INTEGRATION USING MOLECULAR-BEAM EPITAXIAL REGROWTH." APPLIED PHYSICS LETTERS 59, no. 22, 2826-2828 - 2826-2828.
  • ZEBDA, Y.; LAI, R.; BHATTACHARYA, P.; PAVLIDIS, D. et al., 1991, "MONOLITHICALLY INTEGRATED INP-BASED FRONT-END PHOTORECEIVERS." IEEE TRANSACTIONS ON ELECTRON DEVICES 38, no. 6, 1324-1333 - 1324-1333.
  • CHAND, N.; BERGER, P.R.; DUTTA, N.K., 1991, "SUBSTANTIAL IMPROVEMENT BY SUBSTRATE MISORIENTATION IN DC PERFORMANCE OF AL0.5GA0.5AS/GAAS/AL0.5GA0.5AS DOUBLE-HETEROJUNCTION NPN BIPOLAR-TRANSISTORS GROWN BY MOLECULAR-BEAM EPITAXY." APPLIED PHYSICS LETTERS 59, no. 2, 186-188 - 186-188.
  • BERGER, P.R.; DUTTA, N.K.; LOPATA, J.; CHU, S.N.G. et al., 1991, "MONOLITHIC INTEGRATION OF GAAS AND IN0.2GA0.8AS LASERS BY MOLECULAR-BEAM EPITAXY ON GAAS." APPLIED PHYSICS LETTERS 58, no. 23, 2698-2700 - 2698-2700.
  • BERGER, P.R.; DUTTA, N.K.; CHOQUETTE, K.D.; HASNAIN, G. et al., 1991, "MONOLITHICALLY PELTIER-COOLED VERTICAL-CAVITY SURFACE-EMITTING LASERS." APPLIED PHYSICS LETTERS 59, no. 1, 117-119 - 117-119.
  • CHAND, N.; BERGER, P.R.; DUTTA, N.K., 1991, "EFFECTS OF SUBSTRATE TILTING IN SUBSTANTIAL IMPROVEMENT OF DC PERFORMANCE OF ALGAAS/GAAS N-P-N DHBTS GROWN BY MBE." IEEE TRANSACTIONS ON ELECTRON DEVICES 38, no. 12, 2717-2718 - 2717-2718.
  • BERGER, P.R.; BHATTACHARYA, P.K.; GUPTA, S., 1991, "A WAVE-GUIDE DIRECTIONAL COUPLER WITH A NONLINEAR COUPLING MEDIUM." IEEE JOURNAL OF QUANTUM ELECTRONICS 27, no. 3, 788-795 - 788-795.
  • BERGER, P.R.; CHAND, N.; DUTTA, N.K., 1991, "AN ALGAAS DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTOR GROWN BY MOLECULAR-BEAM EPITAXY." APPLIED PHYSICS LETTERS 59, no. 9, 1099-1101 - 1099-1101.
  • DUTTA, N.K.; LOPATA, J.; BERGER, P.R.; SIVCO, D.L. et al., 1991, "PERFORMANCE-CHARACTERISTICS OF GAINAS/GAAS LARGE OPTICAL CAVITY QUANTUM-WELL LASERS." ELECTRONICS LETTERS 27, no. 8, 680-682 - 680-682.

1990

  • BERGER, P.R.; CHEN, Y.C.; SINGH, J.; BHATTACHARYA, P.K., 1990, "GROWTH MODES OF (100) INXGA1-X AS GROWTH ON GAAS INP BELOW CRITICAL THICKNESS - CONSEQUENCES FOR PSEUDOMORPHIC MODFETS." GALLIUM ARSENIDE AND RELATED COMPOUNDS 1989 106, 183-188 - 183-188.
  • PAMULAPATI, J.; LAI, R.; NG, G.I.; CHEN, Y.C. et al., 1990, "THE RELATION OF THE PERFORMANCE-CHARACTERISTICS OF PSEUDOMORPHIC IN0.53+XGA0.47-XAS/IN0.52AL0.48AS(0-LESS-THAN-X-LESS-THAN-0.32) MODULATION-DOPED FIELD-EFFECT TRANSISTORS TO MOLECULAR-BEAM EPITAXIAL-GROWTH MODES." JOURNAL OF APPLIED PHYSICS 68, no. 1, 347-350 - 347-350.

1989

  • PAMULAPATI, J.; BERGER, P.; CHANG, K.; OH, J. et al., 1989, "GROWTH PHENOMENA AND CHARACTERISTICS OF STRAINED INXGA1-XAS ON GAAS." JOURNAL OF CRYSTAL GROWTH 95, no. 1-4, 193-196 - 193-196.
  • BISWAS, D.; BERGER, P.R.; BHATTACHARYA, P., 1989, "RECOMBINATION VELOCITY AT MOLECULAR-BEAM-EPITAXIAL GAAS REGROWN INTERFACES." JOURNAL OF APPLIED PHYSICS 65, no. 6, 2571-2573 - 2571-2573.
  • BISWAS, D.; BERGER, P.R.; DAS, U.; OH, J.E. et al., 1989, "INVESTIGATION OF THE INTERFACE REGION PRODUCED BY MOLECULAR-BEAM EPITAXIAL REGROWTH." JOURNAL OF ELECTRONIC MATERIALS 18, no. 2, 137-142 - 137-142.

1988

  • Berger, P.R.; Chang, K.H.; Bhattacharya, P.; Singh, J. et al., 1988, "In-situ RHEED studies to understand the dislocation formation process in growth of InGaAs on GaAs." Proceedings of SPIE - The International Society for Optical Engineering 944, 10-13 - 10-13.
  • BERGER, P.R.; CHANG, K.; BHATTACHARYA, P.; SINGH, J. et al., 1988, "ROLE OF STRAIN AND GROWTH-CONDITIONS ON THE GROWTH FRONT PROFILE OF INXGA1-XAS ON GAAS DURING THE PSEUDOMORPHIC GROWTH REGIME." APPLIED PHYSICS LETTERS 53, no. 8, 684-686 - 684-686.
  • BERGER, P.R.; CHEN, Y.; BHATTACHARYA, P.; PAMULAPATI, J. et al., 1988, "DEMONSTRATION OF ALL-OPTICAL MODULATION IN A VERTICAL GUIDED-WAVE NONLINEAR COUPLER." APPLIED PHYSICS LETTERS 52, no. 14, 1125-1127 - 1125-1127.
  • DAS, U.; CHEN, Y.; BHATTACHARYA, P.K.; BERGER, P.R., 1988, "ORIENTATION-DEPENDENT PHASE MODULATION IN INGAAS/GAAS MULTIQUANTUM WELL WAVE-GUIDES." APPLIED PHYSICS LETTERS 53, no. 22, 2129-2131 - 2129-2131.

1987

  • BERGER, P.R.; BHATTACHARYA, P.K.; SINGH, J., 1987, "COMPARATIVE-STUDY OF THE GROWTH-PROCESSES OF GAAS, ALGAAS, INGAAS, AND INALAS LATTICE MATCHED AND NONLATTICE MATCHED SEMICONDUCTORS USING HIGH-ENERGY ELECTRON-DIFFRACTION." JOURNAL OF APPLIED PHYSICS 61, no. 8, 2856-2860 - 2856-2860.
  • JUANG, F.Y.; HONG, W.P.; BERGER, P.R.; BHATTACHARYA, P.K. et al., 1987, "GROWTH AND PROPERTIES OF IN0.52AL0.48AS/IN0.53GA0.47AS, GAAS-IN AND INGAAS GAAS MULTILAYERS." JOURNAL OF CRYSTAL GROWTH 81, no. 1-4, 373-377 - 373-377.
  • BERGER, P.R.; CHANG, K.; BHATTACHARYA, P.K.; SINGH, J., 1987, "A STUDY OF STRAIN-RELATED EFFECTS IN THE MOLECULAR-BEAM EPITAXY GROWTH OF INXGA1-XAS ON GAAS USING REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 5, no. 4, 1162-1166 - 1162-1166.
  • DAS, U.; BERGER, P.R.; BHATTACHARYA, P.K., 1987, "INGAAS/GAAS MULTIQUANTUM-WELL ELECTROABSORPTION MODULATOR WITH INTEGRATED WAVE-GUIDE." OPTICS LETTERS 12, no. 10, 820-822 - 820-822.
  • CHANG, K.H.; BERGER, P.R.; SINGH, J.; BHATTACHARYA, P.K., 1987, "MOLECULAR-BEAM EPITAXIAL-GROWTH AND LUMINESCENCE OF INXGA1-XAS/INXAL1-XAS MULTIQUANTUM WELLS ON GAAS." APPLIED PHYSICS LETTERS 51, no. 4, 261-263 - 261-263.
  • SEO, K.S.; BERGER, P.R.; KOTHIYAL, G.P.; BHATTACHARYA, P.K., 1987, "ANOMALOUS EFFECTS OF LAMP ANNEALING IN MODULATION-DOPED IN0.53GA0.47AS/IN0.52AL0.48AS AND SI-IMPLANTED IN0.53GA0.47AS." IEEE TRANSACTIONS ON ELECTRON DEVICES 34, no. 2, 235-240 - 235-240.

1986

  • BHATTACHARYA, P.K.; DHAR, S.; BERGER, P.; JUANG, F.Y., 1986, "LOW DEFECT DENSITIES IN MOLECULAR-BEAM EPITAXIAL GAAS ACHIEVED BY ISOELECTRONIC IN DOPING." APPLIED PHYSICS LETTERS 49, no. 8, 470-472 - 470-472.
  • NASHIMOTO, Y.; DHAR, S.; HONG, W.P.; CHIN, A. et al., 1986, "INVESTIGATION OF MOLECULAR-BEAM EPITAXIAL IN0.53GA0.47AS REGROWN ON LIQUID-PHASE EPITAXIAL IN0.53GA0.47AS/INP." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 4, no. 2, 540-542 - 540-542.

Unknown

  • Brown, E.R.; Zhang, W-D.; Growden, T.A.; Berger, P.R. et al., "Strong Band-Edge Light Emission from InGaAs RTDs: Evidence for the Universal Nature of Resonant- and Zener- Co-Tunneling."
  • Brown, E.R.; Zhang, W-D.; Growden, T.A.; Berger, P.R. et al., "Noise Measurements of High-Speed, Light-Emitting GaN Resonant-Tunneling Diodes."

Papers in Proceedings

2020

  • Brown, E.R.; Zhang, W.D.; Fakhimi, P.; Growden, T.A. et al. "RTD Light Emission around 1550 nm with IQE up to 6% at 300 K." (6 2020).

2019

  • Bhalerao, S.R.; Lupo, D.; Berger, P.R. "2-volt Solution-Processed, Indium Oxide (In2 O3) Thin Film Transistors on flexible Kapton." (8 2019).
  • Growden, T.A.; Storm, D.F.; Cornuelle, E.M.; Whitaker, L.M. et al. "Pulsed characteristics for high current, large area GaN/Ain resonant tunneling diodes." (6 2019).
  • Fakhimi, P.; Zhang, W.D.; Growden, T.A.; Brown, E.R. et al. "New Device Physics of Cross-Gap Electroluminescence in Unipolar-Doped InGaAs/AlAs RTDs." (6 2019).
  • Berger, P.R.; Li, M.; Mattei, R.M.; Niang, M.A. et al. "Advancements in Solution Processable Devices using Metal Oxides For Printed Internet-of-Things Objects." (3 2019).

2017

  • Rinne, J.; Keskinen, J.; Berger, P.R.; Lupo, D. et al. "Wireless Energy Harvesting and Communications: Limits and Reliability." in IEEE Wireless Communications and Networking Conference (WCNC). (1 2017).

2016

  • Rinne, J.; Keskinen, J.; Berger, P.R.; Lupo, D. et al. "Feasibility and Fundamental Limits of Energy-Harvesting Based M2M Communications." in 27th IEEE Annual International Symposium on Personal, Indoor, and Mobile Radio Communications (PIMRC). (1 2016).

2013

  • Kim, M.; Clingerman, M.C.; Kawczak, A.W.; Berger, P.R. "Demonstration of Hybrid Prototype Sealant for Encapsulating Organic Photovoltaics." in 38th IEEE Photovoltaic Specialists Conference (PVSC). (1 2013).

2012

  • Ramesh, A.; Berger, P.R.; Douhard, B.; Vandervorst, W. et al. "200-mm CVD grown Si/SiGe resonant interband tunnel diodes optimized for high peak-to-valley current ratios." (7 2012).

2009

  • Yoon, W.J.; Ghosh, Y.; Alberding, B.; Chisholm, M.H. et al. "Efficient organic bulk heterojunction solar cells through near infrared absorbing metallated thiophene complexes." (12 2009).
  • Yoon, W.J.; Jung, K.Y.; Liu, J.; Duraisamy, T. et al. "Efficient poly(3-hexylthiophene)-fullerene derivative bulk heterojunction photovoltaic devices using unique self-assembled layer of Ag nanoparticles with controllable particle-to-particle spacing." (12 2009).
  • Yoon, W-J.; Ghosh, Y.; Alberding, B.; Chisholm, M.H. et al. "Efficient Organic Bulk Heterojunction Solar Cells through Near Infrared Absorbing Metallated Thiophene Complexes." in 34th IEEE Photovoltaic Specialists Conference. (1 2009).
  • Yoon, W-J.; Jung, K-Y.; Liu, J.; Duraisamy, T. et al. "Efficient Poly(3-hexylthiophene)-Fullerene Derivative Bulk Heterojunction Photovoltaic Devices using Unique Self-assembled Layer of Ag Nanoparticles with Controllable Particle-to-particle Spacing." in 34th IEEE Photovoltaic Specialists Conference. (1 2009).
  • Park, S.Y.; Anisha, R.; Jiang, S.; Berger, P.R. et al. "Zero-bias Si backward diodes detectors incorporating P and B δ-doping layers grown by chemical vapor deposition." (12 2009).

2008

  • Yoon, W-J.; Berger, P.R. "SURFACE MODIFICATIONS TO THE INDIUM TIN OXIDE (ITO) ANODES THROUGH PLASMA OXIDIZED SILVER FOR EFFICIENT P3HT:PCBM (1:0.8) BULK HETEROJUNCTION PHOTOVOLTAIC DEVICES." in 33rd IEEE Photovoltaic Specialists Conference. (1 2008).

2007

  • Pawlik, D.J.; Mulikerjee, S.; Krom, R.; Pandharpure, S. et al. "Temperature dependent empirical modeling of proximity diffused Si Esaki diodes and memory circuits." in International Semiconductor Device Research Symposium. (1 2007).
  • Park, S.Y.; Yu, R.; Chung, S.Y.; Berger, P.R. et al. "Delta-doped Si/SiGe zero-bias backward diodes for micro-wave detection." (12 2007).
  • Krom, R.; Pawlik, D.J.; Muhkerjee, S.; Pandharpure, S. et al. "Anneal time study of Si resonant interband tunnel diodes grown by low-temperature molecular-beam epitaxy." in International Semiconductor Device Research Symposium. (1 2007).
  • Thompson, P.E.; Jernigan, G.G.; Park, S-Y.; Yu, R. et al. "Simplified Si resonant interband tunnel diodes." in International Semiconductor Device Research Symposium. (1 2007).

2006

  • Yoon, W.J.; Bonifas, A.P.; McCreery, R.L.; Berger, P.R. "Resonant tunneling and room temperature negative differential resistance in TiO2/MEH-PPV junctions for quantum functional circuits." (1 2006).
  • Yoon, W.J.; Bonifas, A.P.; McCreery, R.L.; Berger, P.R. "Resonant tunneling and room temperature negative differential resistance in TiO2/MEH-PPV junctions for quantum functional circuits." (1 2006).

2005

  • Sudirgo, S.; Pawlik, D.J.; Rommel, S.L.; Kurinec, S.K. et al. "Analysis of the biasing conditions and latching operation for Si/SiGe resonant interband tunnel diode based tunneling SRAM." (12 2005).
  • Jin, N.; Chung, S.Y.; Heyns, R.M.; Berger, P.R. et al. "Phosphorus diffusion in Si-based resonant interband tunneling diodes and tri-state logic using vertically stacked diodes." in 2nd International SiGe Technology and Device Meeting (ISTDM). (2 2005).
  • Chung, S.Y.; Yu, R.; Jin, N.; Park, S.Y. et al. "Si-based resonant interband tunnel diode with cutoff frequency over 20 GHz and estimated peak current density of 218 kA/cm2." (12 2005).
  • Pawlik, D.J.; Sudirgo, S.; Kurinec, S.K.; Thompson, P.E. et al. "High temperature characterization of Si/SiGe resonant interband tunnel diodes." (12 2005).
  • Chung, S.Y.; Park, S.Y.; Daulton, J.W.; Yu, R. et al. "Monolithic Si/SiGe HBT-RITD circuit with controllable negative differential resistance for voltage controlled oscillator applications." (12 2005).
  • Park, S.Y.; Chung, S.Y.; Yu, R.; Berger, P.R. et al. "Low sidewall damage plasma etching with ICP-RIE and HBr chemistry of Si/SiGe resonant interband tunnel diodes." (12 2005).
  • Xu, Y.; Berger, P.R.; Cho, J.; Timmons, R.B. "High-k polymerized dichlorotetramethyldisiloxane films deposited by radio frequency pulsed plasma for gate dielectrics in polymer field effect transistors." (1 2005).

2004

  • Sudirgo, S.; Vega, R.; Nandgaonkar, R.P.; Hirschman, K.D. et al. "Overgrown Si/SiGe resonant interband tunnel diodes for integration with CMOS." (12 2004).
  • Sudirgo, S.; Nandgaonkar, R.P.; Curanovic, B.; Hebding, J.L. et al. "Monolithically integrated Si/SiGe resonant interband tunnel diode/CMOS demonstrating low voltage MOBILE operation." in International Semiconductor Device Reseaech Symposium (ISDRS 03). (10 2004).
  • Jin, N.; Liu, D.; Chung, S.Y.; Yu, R. et al. "A combined model for Si-based resonant interband tunneling diodes grown on SOI." (12 2004).
  • Xu, Y.F.; Berger, P.R.; Wilson, J.N.; Bunz, U.H.F. "Light sensitive polymer thin film transistors based on BAS-PPE." in Symposium on Flexible Electronics-Materials and Device Technology held at the 2004 MRS Spring Meeting. (1 2004).

2003

  • Sudirgo, S.; Nandgaonkar, R.P.; Curanovic, B.; Hebding, J. et al. "Monolithically integrated Si/SiGe resonant interband tunneling dioded/CMOS MOBILE latch with high voltage swing." (1 2003).
  • Sudirgo, S.; Curanovic, B.; Rommel, S.L.; Hirschman, K.D. et al. "Challenges in integration of resonant interband tunnel devices with CMOS." (9 2003).
  • Xu, Y.F.; Berger, P.; Cho, J.; Timmons, R.B. "Capacitance-voltage characterization of pulsed plasma polymerized allylamine dielectrics." in Symposium on Electronics on Unconventional Substrates-Electrotextiles and Giant-Area Flexible Circuits held at the 2002 MRS Fall Meeting. (1 2003).
  • Chung, S.Y.; Jin, N.; Yu, R.H.; Berger, P.R. et al. "Monolithic vertical integration of Si/SiGe HBT and Si-based resonant interband tunneling diode demonstrating latching operation and adjustable peak-to-valley current ratios." in IEEE International Electron Devices Meeting. (1 2003).

2002

  • Jin,N; Rice,A,T; Berger,P,R; Thompson,P,E; Chi,P,H; Simons,D,S "SiGe diffusion barriers for P-doped Si/SiGe resonant interband tunnel diodes." in IEEE Lester Eastman Conference on High Performance Devices. (1 2002).
  • Jin, N.; Rice, A.T.; Berger, P.R.; Thompson, P.E. et al. "SiGe diffusion barriers for P-doped Si/SiGe resonant interband tunnel diodes." in IEEE Lester Eastman Conference on High Performance Devices. (1 2002).

2001

  • Berger, P.R. "Metal-semiconductor-metal photodetectors." in Conference on Testing, Reliability, and Applications of Optoelectronic Devices. (1 2001).
  • Berger,P,R "Metal-semiconductor-metal photodetectors." in Conference on Testing, Reliability, and Applications of Optoelectronic Devices. (1 2001).
  • Kempisty,J,J; Hirschman,K,D; Kurinec,S,K; Jin,N; Chung,S,Y; Berger,P,R; Thompson,P,E "Integration of silicon-based tunnel diodes with CMOS: An RIT-OSU-NRL-NSF effort." in 14th Biennial University/Government/Industry Microelectronics Symposium. (1 2001).
  • Kempisty, J.J.; Hirschman, K.D.; Kurinec, S.K.; Jin, N. et al. "Integration of silicon-based tunnel diodes with CMOS: An RIT-OSU-NRL-NSF effort." in 14th Biennial University/Government/Industry Microelectronics Symposium. (1 2001).

1999

  • Prather, D.W.; Liccone, M.L.; LeCompte, M.; Gao, X. et al. "Optically interconnected static-RAM for instruction level parallel processors." in Conference on Optoelectronic Interconnects VI. (1 1999).

1998

  • Rommel, S.L.; Dillon, T.E.; Berger, P.R.; Lake, R. et al. "Si-based interband tunneling devices for high-speed logic and low power memory applications." in International Electron Devices Meeting (IEDM). (1 1998).
  • Wright,N; Khan,A,T; Berger,P,R; Guarin,F,J; Iyer,S,S "Photoluminescence of SiSnC alloys grown on (100) Si substrates." in Materials-Research-Society Symposium on Epitaxy and Applications of Si-Based Heterostructures. (1 1998).
  • Dashiell, M.W.; Troeger, R.T.; Roe, K.J.; Khan, A.S. et al. "Electrical and optical properties of phosphorus doped Ge1-yCy." in 7th International Symposium on Silicon Molecular Beam Epitaxy. (5 1998).
  • Wright, N.; Khan, A.T.; Berger, P.R.; Guarin, F.J. et al. "Photoluminescence of SiSnC alloys grown on (100) Si substrates." in Materials-Research-Society Symposium on Epitaxy and Applications of Si-Based Heterostructures. (1 1998).

1997

  • Khan,A,ST; Berger,P,R; Guarin,F,J; Iyer,S,S "Near band edge photoluminescence from pseudomorphic tensially strained Si0.985C0.015 alloy." in European-Materials-Research-Society 1996 Spring Meeting, Symposium D: Group IV Heterostructures, Physics and Devices. (2 1997).
  • Shao, X.P.; Rommel, S.L.; Orner, B.A.; Feng, H. et al. "Ge1-xCx/Si heterojunction photodiodes." in Conference on Silicon-Based Monolithic and Hybrid Optoelectronic Devices. (1 1997).
  • Rommel, S.L.; Erby, D.N.; Gao, W.; Berger, P.R. et al. "Equivalent circuit modeling of metal-semiconductor-metal photodiodes with transparent conductor electrodes." in Conference on Photodetectors - Materials and Devices II. (1 1997).

1996

  • Vaccaro, K.; Spaziani, S.M.; Dauplaise, H.M.; Berger, P.R. et al. "Inverted, substrate-removed MSM and schottky diode optical detectors." in 8th International Conference on Indium Phosphide and Related Materials. (1 1996).
  • Vaccaro,K; Spaziani,S,M; Dauplaise,H,M; Berger,P,R; Davis,A; TSACOYEANES,C,W; Martin,E,A; Lorenzo,J,P "Inverted, substrate-removed MSM and schottky diode optical detectors." in 8th International Conference on Indium Phosphide and Related Materials. (1 1996).

1995

  • Gao, W.; Berger, P.R.; Hunsperger, R.G.; Pamulapati, J. "Liquid phase epitaxial InGaAs on InP with rare-earth elements." in 1995 Annual/8th Annual Meeting of the IEEE Lasers-and-Electro-Optics-Society (LEOS 95). (1 1995).
  • Kolodzey,J; Berger,P,R; Orner,B,A; Hits,D; Chen,F; Khan,A; Shao,X; Waite,M,M; Shah,S,I; Swann,C,P; Unruh,K,M "Optical and electronic properties of SiGeC alloys grown on Si substrate." in 6th International Symposium on Silicon Molecular Beam Epitaxy of the 1995 E-MRS Spring Conference. (12 1995).
  • NICHOLS, D.T.; HOBSON, W.S.; BERGER, P.R.; DUTTA, N.K. et al. "MONOLITHICALLY INTEGRATED OPTICAL RECEIVERS AND TRANSMITTERS." in 21st International Symposium on Compound Semiconductors. (1 1995).

1994

  • NICHOLS, D.T.; DUTTA, N.K.; BERGER, P.R.; SMITH, P.R. et al. "MONOLITHIC PIN-FET PHOTORECEIVERS." in Conference on Technologies for Optical Fiber Communications. (1 1994).
  • Nichols, D.T.; Lopata, J.; Hobson, W.S.; Berger, P.R. et al. "Integrated-optical-receivers and transmitters for use in wide-bandwidth optical transmission systems." (1 1994).
  • Gao, W.; Khan, A.S.; Berger, P.R.; Hunsperger, R. et al. "Long wavelength metal-semiconductor-metal photodiodes with transparent cadmium tin oxide Schottky contacts." (12 1994).

1993

  • Nichols, D.T.; Dutta, N.K.; Lopata, J.; Berger, P.R. et al. "Monolithic PIN-FET photoreceivers." (1 1993).

1992

  • LOPATA, J.; DUTTA, N.K.; HOBSON, W.S.; BERGER, P.R. "BURIED HETEROSTRUCTURE LASERS USING A SINGLE-STEP METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION GROWTH OVER PATTERNED SUBSTRATES." in CONF ON ADVANCED SEMICONDUCTOR EPITAXIAL GROWTH PROCESSES AND LATERAL AND VERTICAL FABRICATION. (1 1992).
  • BERGER, P.R.; HUMPHREY, D.A.; SMITH, P.R.; MONTGOMERY, R.K. et al. "INTEGRATED PHOTORECEIVER ARRAY USING MOLECULAR-BEAM EPITAXIAL REGROWTH." in 4TH INTERNATIONAL CONF ON INDIUM PHOSPHIDE AND RELATED MATERIALS. (1 1992).

1990

  • BERGER, P.R.; CHEN, Y.C.; SINGH, J.; BHATTACHARYA, P.K. "GROWTH MODES OF (100) INXGA1-X AS GROWTH ON GAAS INP BELOW CRITICAL THICKNESS - CONSEQUENCES FOR PSEUDOMORPHIC MODFETS." (1 1990).
  • Lai, W.Q.; Berger, P.R.; Bhattacharya, P.; Zebda, Y. et al. "Monolithically integrated In0.53Ga0.47As/In0.52Al0.48As front-end photoreceivers realized by molecular beam epitaxy and regrowth techniques." (12 1990).

1988

  • Chen, Y.; Berger, P.R.; Bhattacharya, P.; Pamulapati, J. et al. "Nonlinear all-optical modulation in a GaAs/AlGaAs multiple quantum well vertical direction coupler.." (12 1988).
  • BISWAS, D.; BERGER, P.R.; DAS, U.; OH, J.E. et al. "INVESTIGATION OF THE INTERFACE REGION PRODUCED BY MOLECULAR-BEAM EPITAXIAL REGROWTH." (7 1988).

1987

  • CHANG, K.H.; BERGER, P.R.; BHATTACHARYA, P.K.; SINGH, J. et al. "MOLECULAR-BEAM HETEROEPITAXIAL GROWTH OF INXGA1-XAS/INXAL1-XAS MULTI-QUANTUM-WELLS ON GAAS WITH INSITU RHEED STUDIES." (7 1987).