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Hongping Zhao

  • Associate Professor, Electrical & Computer Engr.
  • 2015 Neil Ave
    Columbus, OH 43210

About

Bio:

Dr. Hongping Zhao received her Ph.D. in Electrical Engineering from Lehigh University in 2011. Throughout July 2011- July 2017, she was an Assistant Professor in the Department of Electrical Engineering and Computer Science at Case Western Reserve University, Cleveland, Ohio. Since August 2017, Zhao has been an Associate Professor at the Department of Electrical and Computer Engineering at the Ohio State University.

Research Interests:

Wide Bandgap and Ultra-Wide Bandgap Semiconductor Materials and Devices
Dr. Zhao’s research thrust falls under the umbrella of the growth and physics of wide bandgap (WBG) and ultra-wide bandgap (UWBG) semiconductor materials and devices, and the low-dimensional semiconductor nano-materials and devices. Specifically, her research focuses on the metalorganic chemical vapor deposition (MOCVD) of III-nitrides, II-IV-nitrides and III-oxides; low pressure chemical vapor deposition (LPCVD) of Gallium Oxide (Ga2O3) thin films; and growth of nitride and oxide based semiconductor nanomaterials and structures. The device applications include semiconductor electronic and optoelectronic devices: transistors, power electronics, light-emitting diodes for solid state lighting, UV photodetectors and solar cells for renewable energy generation, as well as semiconductor nanomaterials and structures for chemical and biomedical sensing, and microelectromechanical/nanoelectromechanical systems (MEMS/NEMS).

 

Contact:

Phone: 614-688-2367

Office: 213 Caldwell Lab

Professional Group Website:

https://u.osu.edu/zhao2592

Journal Articles

2020

  • Zhang, Y.; Feng, Z.; Karim, M.R.; Zhao, H., 2020, "High-temperature low-pressure chemical vapor deposition of β-Ga2O3." Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 38, no. 5,
  • Bhuiyan, A.F.M.A.U.; Feng, Z.; Johnson, J.M.; Huang, H.L. et al., 2020, "MOCVD growth of β-phase (AlxGa1-x)2O3on (2 ¯ 01) β-Ga2O3substrates." Applied Physics Letters 117, no. 14,
  • Ghadi, H.; McGlone, J.F.; Feng, Z.; Bhuiyan, A.F.M.A.U. et al., 2020, "Influence of growth temperature on defect states throughout the bandgap of MOCVD-grown β -Ga2O3." Applied Physics Letters 117, no. 17,
  • Anhar Uddin Bhuiyan, A.F.M.; Feng, Z.; Johnson, J.M.; Huang, H.L. et al., 2020, "MOCVD Epitaxy of Ultrawide Bandgap β-(AlxGa1- x)2O3with High-Al Composition on (100) β-Ga2O3Substrates." Crystal Growth and Design 20, no. 10, 6722-6730 - 6722-6730.

2010

  • Sun, G.; Ding, Y.J.; Liu, G.Y.; Huang, G.S. et al., 2010, "Photoluminescence Emission in Deep Ultraviolet Region from GaN/AlN Asymmetric-Coupled Quantum Wells." Appl. Phys. Lett. 97, no. 2, 021904-021904 - 021904-021904.

2004

  • Zhong, X.; Zhao, H.; Lei, W.; Zhang, X. et al., 2004, "Numerical study of the electron and ion trajectories in HOPFEDs." Journal of the Society for Information Display 12, no. 4, 483-483 - 483-483.

Papers in Proceedings

2009

  • Zhao, H.; Liu, G.; Li, X.; Arif, R.A. et al. "Growth of staggered InGaN quantum wells light-emitting diodes emitting at 520-525 nm employing graded temperature profile." (4 2009).
  • Zhao, H.; Liu, G.; Arif, R.A.; Tansu, N. "Effect of current injection efficiency on efficiency-droop in InGaN quantum well light-emitting diodes." (12 2009).
  • Zhao, H.; Arif, R.A.; Tansu, N. "Staggered InGaN quantum well diode lasers emitting at 500 nm." (4 2009).

2008

  • Arif, R.A.; Zhao, H.; Ee, Y.K.; Tafon Penn, S. et al. "Spontaneous recombination rate and luminescence efficiency of staggered ingan quantum wells light emitting diodes." (1 2008).
  • Arif, R.A.; Zhao, H.; Tansu, N. "InGaN-GaNAs type-II 'W' quantum well lasers for emission at 450-nm." (1 2008).
  • Zhao, H.; Arif, R.A.; Huang, G.S.; Ee, Y.K. et al. "Self-consistent optical gain analysis and epitaxy of strain-compensated InGaN-AlGaN quantum wells for laser applications." (1 2008).
  • Zhao, H.; Arif, R.A.; Ee, Y.K.; Tansu, N. "Optical gain and spontaneous emission of strain-compensated InGaN-AlGaN quantum wells including carrier screening effect." (4 2008).
  • Arif, R.A.; Zhao, H.; Ee, Y.K.; Penn, S.T. et al. "Spontaneous recombination rate and luminescence efficiency of staggered InGaN quantum wells light emitting diodes." (9 2008).
  • Arif, R.A.; Zhao, H.; Ee, Y.K.; Tansu, N. "Radiative efficiency and spontaneous recombination rate of staggered InGaN quantum well LED at 420-510 nm." (4 2008).
  • Zhao, H.; Arif, R.A.; Huang, G.S.; Ee, Y.K. et al. "Self-consistent optical gain analysis and epitaxy of strain-compensated InGaN-AlGaN quantum wells for laser applications." (9 2008).
  • Tansu, N.; Zhao, H.; Arif, R.A.; Ee, Y.K. et al. "Polarization engineering of ingan-based nanostructures for low-threshold diode lasers and high-efficiency light emitting diodes." (12 2008).
  • Tansu, N.; Arif, R.A.; Zhao, H.; Huang, G.S. et al. "Polarization engineering of III-nitride nanostructures for high-efficiency light emitting diodes." (11 2008).

2007

  • Zhao, H.; Arif, R.A.; Ee, Y.K.; Tansu, N. "Optical gain analysis of staggered InGaN quantum well active regions for lasers emitting at 420-500 nm." (12 2007).
  • Zhao, H.; Arif, R.A.; Ee, Y.K.; Tansu, N. "Optical gain analysis of strain compensated InGaN-AlGaN quantum well active regions for lasers emitting at 420-500 nm." (12 2007).